DocumentCode
2648265
Title
A Low Noise Single-Ended GaAs Schottky FET Amplifier for a 14 GHz Satellite Communication Application
Author
Estabrook, P. ; Krowne, C.M., Jr. ; Crescenzi, E.J. ; Stegens, R.E.
fYear
1978
fDate
27-29 June 1978
Firstpage
129
Lastpage
131
Abstract
A 14.0 - 14.5 GHz amplifier consisting of a cascade of three single-ended stages which realizes a noise figure of 3.5 dB and a gain of 17 dB has been designed. This has been achieved with a new design technique which is tolerant of changes in F ET S-parameters and yet capable of extracting the maximum performance of the device. Results on a 10 GHz amplifier designed with the above technique will also be given.
Keywords
Circuit noise; Circuit testing; Communication industry; FETs; Gallium arsenide; Laboratories; Low-noise amplifiers; Noise figure; Satellite communication; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123812
Filename
1123812
Link To Document