DocumentCode
2648273
Title
A Technique for Predicting Large Signal Performance of a GaAs MESFET
Author
Willing, H.A. ; Rauscher, C. ; de Santis, P.
fYear
1978
fDate
27-29 June 1978
Firstpage
132
Lastpage
134
Abstract
A method is described for accurately predicting nonlinear microwave performance of GaAs MESFET devices. The method utilizes time-domain analysis and is based upon experimentally characterized bias-dependence of device circuit model elements. Precise predictions are made of fundamental and harmonic power levels up to 6 dB of gain compression.
Keywords
Capacitance; Electron mobility; Gallium arsenide; Laboratories; MESFETs; Packaging; Predictive models; Scattering parameters; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123813
Filename
1123813
Link To Document