DocumentCode
2648296
Title
Intermodulation Distortion Behavior Of GaAs Power FETS
Author
Strid, E.W. ; Duder, T.C.
fYear
1978
fDate
27-29 June 1978
Firstpage
135
Lastpage
137
Abstract
The 4 GHz intermodulation distortion (IMD) behavior of several Power GaAs FETs from different manufacturers is studied. The two-tone IMD and AM to PM conversion is a function of the source and load impedances. The IMD is not "well-behaved" in general (3:1 IMD slope), and therefore the third-order intercept point is not valid in characterizing these power FET\´s. This data was applied in the design of a 2 watt 3.7-4.2 GHz linear amplifier. lts linearity performance is compared to that of a 2 GHz linear bipolar amplifier.
Keywords
FETs; Gallium arsenide; Impedance; Intermodulation distortion; Linearity; Manufacturing; Performance gain; Power generation; Testing; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123814
Filename
1123814
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