DocumentCode
2648313
Title
Intermodulation Distortion in GaAs FETs
Author
Higgins, J.A.
fYear
1978
fDate
27-29 June 1978
Firstpage
138
Lastpage
141
Abstract
The influence that the active layer profile plays in determining the Intermodulation Distortion levels (IMD) in a power GaAs FET has been analyzed. A simplified model of a tuned amplifier containing the device sources of nonlinearity has yielded an improved understanding of generation of IMD products in such applications as GaAs FET power amplifiers.
Keywords
Distortion measurement; FETs; Gallium arsenide; Implants; Intermodulation distortion; Nonlinear distortion; Power amplifiers; Power generation; Signal analysis; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123815
Filename
1123815
Link To Document