Title :
Intermodulation Distortion in GaAs FETs
Abstract :
The influence that the active layer profile plays in determining the Intermodulation Distortion levels (IMD) in a power GaAs FET has been analyzed. A simplified model of a tuned amplifier containing the device sources of nonlinearity has yielded an improved understanding of generation of IMD products in such applications as GaAs FET power amplifiers.
Keywords :
Distortion measurement; FETs; Gallium arsenide; Implants; Intermodulation distortion; Nonlinear distortion; Power amplifiers; Power generation; Signal analysis; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123815
