DocumentCode :
2648534
Title :
Aging data analysis for high power laser diodes
Author :
Lu, Guoguang ; Huang, Yun ; En, Yunfei
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., China Electron. Product Reliability & Environ. Testing Res. Inst., Guangzhou, China
fYear :
2011
fDate :
17-19 June 2011
Firstpage :
342
Lastpage :
345
Abstract :
Three groups of lifetime test were completed, according to the statistical knowledge, the degradation model of cm-bars is obtained using the short-term working datas, then we obtain the extrapolated lifetime of cm-bars at 25°C is 7950 hours (2.86×109 shots), and we also obtain an acceleration factor 1.88 of resulting in a thermal activation energy of Ea=0.21eV using Arrhenius function.
Keywords :
extrapolation; semiconductor lasers; Arrhenius function; acceleration factor; aging data analysis; degradation model; electron volt energy 0.21 eV; extrapolated lifetime; high power laser diodes; lifetime test; temperature 25 degC; thermal activation energy; time 7950 hour; Aging; Degradation; Diode lasers; Equations; Extrapolation; Mathematical model; Semiconductor lasers; acceleration factor; degradation; laser diodes; lifetime; thermal activation energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality, Reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE), 2011 International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4577-1229-6
Type :
conf
DOI :
10.1109/ICQR2MSE.2011.5976626
Filename :
5976626
Link To Document :
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