The gate metal degradation mechanism and electromigration evaluation of PHEMT devices

Author

Huang, Yun ; Li, Shajin ; Hong, Xiao

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., China Electron. Product Reliability & Environ. Testing Res. Inst., Guangzhou, China

fYear

2011

fDate

17-19 June 2011

Firstpage

370

Lastpage

373

Abstract

An evaluation structure about gate metal degradation of pseudomorphic High-Electron Mobility Transistor (PHEMT) is designed in this study. It realized separated evaluation of the resisted electromigration levels between the evaporation metal Ti/Pt/Au and the plating metal Au in gate metal structure. There are 4 multiple disparities between their resisted electromigration levels. And the resisted electromigration levels of electrioplating Au in gate metal Ti/Pt/Au-Au structure is the weakest. The Ti/Pt/Au-Au electromigration life under constant current stress and high temperature stress test has been obtained, evaluated the stability of PHEMT gate metal, provided reference and basis for the PHEMT power components designers to improve the stability of gate metal structure.

Keywords

III-V semiconductors; aluminium compounds; electromigration; gallium arsenide; gold; high electron mobility transistors; platinum; titanium; AlGaAs-Ti-Pt-Au; PHEMT devices; evaporation metal; gate metal degradation mechanism; gate metal structure; plating metal; pseudomorphic high-electron mobility transistor; resisted electromigration levels; Degradation; Electromigration; Gold; Logic gates; PHEMTs; Stress; PHEMT; electromigration; evaluation; mechanism;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality, Reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE), 2011 International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4577-1229-6

Type

conf

DOI

10.1109/ICQR2MSE.2011.5976633

Filename

5976633