An analysis of turn-off behavior of planar and trench gate IGBTs under soft and hard switching conditions

Author

Iwamoto, Hideo ; Kondo, Hisao ; Hongtao, He ; Kawakami, Akira

Author_Institution

Div. of Power Device, Mitsubishi Electr. Corp., Japan

Volume

1

fYear

2000

fDate

2000

Firstpage

84

Abstract

This paper presents the results of an investigation on turn-off behaviors of the planar and trench gate IGBTs under hard and soft switching conditions. Voltage and current waveforms and power losses are investigated through the simulation and experiment at various parameters of dv/dt, collector current, gate resistance and junction temperature. Moreover, electric potential and field distribution and carrier behavior inside the chips are studied by the simulation. It is noted that the trench gate IGBT has advantage over the planar gate IGBT for the hard switching application. On the other hand, the turn-off loss of the planar gate IGBT under soft switching application is slightly lower than that of the trench gate IGBT

Keywords

insulated gate bipolar transistors; isolation technology; losses; power semiconductor switches; switching; carrier behavior; collector current; current waveforms; electric potential; field distribution; gate resistance; hard switching conditions; junction temperature; planar gate IGBT; power losses; soft switching conditions; trench gate IGBT; turn-off behavior; turn-off loss; voltage waveforms; Analytical models; Biomedical electrodes; Capacitance; Circuit simulation; Current measurement; Insulated gate bipolar transistors; Medical simulation; Switching circuits; Tail; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International

Conference_Location

Beijing

Print_ISBN

7-80003-464-X

Type

conf

DOI

10.1109/IPEMC.2000.885335

Filename

885335