DocumentCode :
2649073
Title :
Effect of channel width on ESD characteristics of SOI MOS device
Author :
He, Yujuan ; En, Yunfei ; Luo, Hongwei ; Xiao, Qingzhong
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
fYear :
2011
fDate :
17-19 June 2011
Firstpage :
469
Lastpage :
471
Abstract :
The ESD characteristic of gate grounded NMOS device with different channel width was studied. It was indicated that the effect of channel width on threshold voltage (Vt1) and maintained voltage (Vsp) was imperceptible and the longer channel width, the larger ESD secondary breakout current (It2). This was probably related to decreased body resistance in thin silicon layer of SOI NMOSFET.
Keywords :
MOSFET; electrostatic discharge; elemental semiconductors; silicon; silicon-on-insulator; ESD characteristics; ESD secondary breakout current; SOI MOS device; SOI NMOSFET; Si; body resistance; channel width effect; gate grounded NMOS device; thin silicon layer; threshold voltage; Electrostatic discharge; Immune system; Laboratories; MOSFET circuits; Reliability; Silicon; Threshold voltage; ESD protection; GGNMOS; SOI; TLP test; channel width; secondary breakout current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality, Reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE), 2011 International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4577-1229-6
Type :
conf
DOI :
10.1109/ICQR2MSE.2011.5976655
Filename :
5976655
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2649073
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