• DocumentCode
    2649181
  • Title

    Microwave GaAs Power FET Amplifiers with Lumped-Element Impedance Matching Networks

  • Author

    Hua Quen Tserng ; Macksey, H.M.

  • fYear
    1978
  • fDate
    27-29 June 1978
  • Firstpage
    282
  • Lastpage
    284
  • Abstract
    Lumped-element impedance matching has been used successfully for the design of GaAs power FET amplifiers at C- and X bands. It is shown that output powers up to 8W with 1 dB bandwidth of from 1 to 5 GHz can be obtained.
  • Keywords
    Bandwidth; Contracts; Gain; Gallium arsenide; Impedance matching; Laboratories; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1978 IEEE-MTT-S International
  • Conference_Location
    Ottawa, ON, Canada
  • Type

    conf

  • DOI
    10.1109/MWSYM.1978.1123864
  • Filename
    1123864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2649181