DocumentCode
2649211
Title
Reliability of Mutil-Layer ceramic capacitor and its conduction mechanism under high electric field
Author
Lu, Yudong ; En, Yunfei ; Wan, Ming ; Wang, Xin
Author_Institution
Applic. of Electron. Component Lab., China Electron. Product Reliability & Environ. Testing Res. Inst., Guangzhou, China
fYear
2011
fDate
17-19 June 2011
Firstpage
501
Lastpage
504
Abstract
The temperature-dependent DC conduction mechanism in BaTiO3-based multilayer ceramic capacitors has been discussed in this paper. In the high electric field, BaTiO3-based Multi-Layer Ceramic Capacitor (MLCC) showed different DC conduction mechanism in room-temperature, Curie-temperature, and high-temperature regions. The DC conduction mechanisms at room and high temperature are Schottky effect and ionic flow, respectively. However, the mechanism at Curie temperature showed a tunnel-like current, abnormal temperature-independence DC conduction current. For the study of this abnormal phenomenon, the structural nature of insulting solids of practical importance is emphasized. Based on the relation of barrier height and phase transformation, the Curie-temperature region is actually controlled by Schottky process. The DC conduction mechanism of BaTiO3-based MLCC in Curie-temperature region can compatibly explained by the change of barrier height resulting from phase transformation.
Keywords
Schottky barriers; barium compounds; ceramic capacitors; ionic conductivity; reliability; solid-state phase transformations; BaTiO3; Curie temperature; Schottky effect; barrier height; ionic flow; multilayer ceramic capacitor; phase transformation; reliability; temperature 293 K to 298 K; temperature-dependent DC conduction current; tunnel-like current; Capacitors; Ceramics; Crystals; Electrodes; Temperature; Tunneling; multi-layer ceramic capacitor; phase transformation; schottky effect; tunneling effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality, Reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE), 2011 International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4577-1229-6
Type
conf
DOI
10.1109/ICQR2MSE.2011.5976662
Filename
5976662
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