Title :
A 2-6.2 GHz, 300 Mw GaAs MESFET Amplifier
Author :
Hornbuckle, D.P.
Abstract :
The development of a 2-6.2 GHz GaAs MESFET amplifier with 300 mW minimum power in production, and 600 mW minimum power with high breakdown-voltage MESFETs, is described.
Keywords :
Bandwidth; Gallium arsenide; Inductors; MESFETs; Microstrip; Power amplifiers; Power generation; Power transmission lines; Production; Spirals;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123866