DocumentCode
2649213
Title
A 2-6.2 GHz, 300 Mw GaAs MESFET Amplifier
Author
Hornbuckle, D.P.
fYear
1978
fDate
27-29 June 1978
Firstpage
288
Lastpage
290
Abstract
The development of a 2-6.2 GHz GaAs MESFET amplifier with 300 mW minimum power in production, and 600 mW minimum power with high breakdown-voltage MESFETs, is described.
Keywords
Bandwidth; Gallium arsenide; Inductors; MESFETs; Microstrip; Power amplifiers; Power generation; Power transmission lines; Production; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123866
Filename
1123866
Link To Document