Title :
Terahertz CMOS circuit design and applications for ultra-high data rate (≫100Gbps) communication
Author :
Chang, Mau-Chung Frank
Author_Institution :
US Nat. Acad. of Eng., UCLA, Los Angeles, CA, USA
Abstract :
Wedged between traditional microwave and optics, the term ¿Terahertz¿ was first named by Fleming to designate EM spectrum range from 300 GHz to 3 THz. It remains one of the least tapped spectra over time. Terahertz image and spectroscopic systems have drawn substantial attention recently due to their unique capabilities in detecting and/or analyzing concealed objects through fog and fabrics. The generation of practical Terahertz signals is nevertheless nontrivial and can only be accomplished by using Free-Electron Radiation, Optical Lasers, Gunn Diodes and sometimes oscillators made of III-V compound based HBT/HEMTs. However, these prior arts suffer major disadvantages of size, cost, complexity, efficiency and/or even cryogenic cooling to produce meaningful signals in the notorious ¿Terahertz Gap¿.
Keywords :
CMOS integrated circuits; integrated circuit design; millimetre wave integrated circuits; Fleming; HBT; HEMT; III-V compound; Terahertz Gap; free-electron radiation; frequency 300 GHz to 3 THz; gunn diodes; optical lasers; spectroscopic systems; terahertz CMOS circuit design; terahertz image; ultra-high data rate communication; Circuit synthesis; Fabrics; Free electron lasers; Gunn devices; Image analysis; Microwave communication; Object detection; Optical design; Signal generators; Spectroscopy;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351288
