• DocumentCode
    2649520
  • Title

    Terahertz CMOS circuit design and applications for ultra-high data rate (≫100Gbps) communication

  • Author

    Chang, Mau-Chung Frank

  • Author_Institution
    US Nat. Acad. of Eng., UCLA, Los Angeles, CA, USA
  • fYear
    2009
  • fDate
    20-23 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Wedged between traditional microwave and optics, the term ¿Terahertz¿ was first named by Fleming to designate EM spectrum range from 300 GHz to 3 THz. It remains one of the least tapped spectra over time. Terahertz image and spectroscopic systems have drawn substantial attention recently due to their unique capabilities in detecting and/or analyzing concealed objects through fog and fabrics. The generation of practical Terahertz signals is nevertheless nontrivial and can only be accomplished by using Free-Electron Radiation, Optical Lasers, Gunn Diodes and sometimes oscillators made of III-V compound based HBT/HEMTs. However, these prior arts suffer major disadvantages of size, cost, complexity, efficiency and/or even cryogenic cooling to produce meaningful signals in the notorious ¿Terahertz Gap¿.
  • Keywords
    CMOS integrated circuits; integrated circuit design; millimetre wave integrated circuits; Fleming; HBT; HEMT; III-V compound; Terahertz Gap; free-electron radiation; frequency 300 GHz to 3 THz; gunn diodes; optical lasers; spectroscopic systems; terahertz CMOS circuit design; terahertz image; ultra-high data rate communication; Circuit synthesis; Fabrics; Free electron lasers; Gunn devices; Image analysis; Microwave communication; Object detection; Optical design; Signal generators; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2009. ASICON '09. IEEE 8th International Conference on
  • Conference_Location
    Changsha, Hunan
  • Print_ISBN
    978-1-4244-3868-6
  • Electronic_ISBN
    978-1-4244-3870-9
  • Type

    conf

  • DOI
    10.1109/ASICON.2009.5351288
  • Filename
    5351288