Title :
A 1.5 Watt 9 GHz Silicon Transistor Power Amplifier
Author :
Yuan, H.T. ; Wu, Y.S.
Abstract :
A 9 GHz power amplifier using the newly developed 2 watt X-band silicon power transistor is reported. The amplifier has 1.5 watts saturated output power at 9.0 GHz. The power gain at saturation is 5 dB with 1 dB bandwidth exceeding 600 MHz.
Keywords :
Bandwidth; Capacitance; Circuit synthesis; Frequency; Impedance matching; Microwave transistors; Power amplifiers; Power generation; Power transistors; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123897
