DocumentCode
2649733
Title
A New Microwave High Power Transistor (Static Induction Transistor)
Author
Kajiwara, Yugo ; Horikiri, K. ; Yukimoto, Y.
fYear
1978
fDate
27-29 June 1978
Firstpage
380
Lastpage
382
Abstract
A high power transistor at microwave frequency has been realized by multi-chips of static induction transistor. An output power of 100 W at 1 GHz was obtained by good design of thermal balance and improvement of packaging. A gain of 2.2 dB and a drain efficiency of 42 % was obtained at output power of 100 W. The linear gain was 3.6 dB.
Keywords
Frequency; Gain; Impurities; Microwave transistors; Packaging; Power amplifiers; Power generation; Power transistors; Temperature distribution; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123898
Filename
1123898
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