Title :
A 30-GHz GaAs FET Amplifier
Abstract :
A Ka-band GaAs FET amplifier with 11 dB maximum single-stage gain at 33 GHz has been developed. At reduced drain currents and drain source voltages, noise figures as low as 5.5 dB were measured, and minimum noise measures of 7.0 dB were obtained from the experimental data. The Hughes 0.5 mu m GaAs FETs used in this development were fabricated using electron-beam lithography. The device fabrication technology of these Hughes FETs and the design and performance of the 30 GHz FET amplifier are discussed in some detail.
Keywords :
Current measurement; FETs; Fabrication; Gain; Gallium arsenide; Lithography; Noise figure; Noise measurement; Noise reduction; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123899
