DocumentCode
2649832
Title
Low-Noise Low-Distortion GaAs FET Amplifiers for 6 GHz Single Sideband Radio
Author
Agarwal, K.K. ; Kuo, Y.L.
fYear
1978
fDate
27-29 June 1978
Firstpage
393
Lastpage
395
Abstract
This paper describes the design of a single-ended GaAs FET pre-amplifier using both computer aided device modeling and empirical methods. The amplifiers have an average noise figure of 2.3 dB, gain of 9 /spl plusmn/ 0.5 dB, third-order distortion (M/sub A+B-C/) of -50 dB and input-output return loss of 30 dB or more over the frequency band of 5.9 to 6.4 GHz.
Keywords
Circuit noise; Distortion measurement; Frequency; Gallium arsenide; Low-noise amplifiers; Microwave FETs; Noise figure; Noise measurement; Nonlinear distortion; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123902
Filename
1123902
Link To Document