How n2 flow rate changes etching

Author

Helhel, S.

Author_Institution

Fac. of Eng., Electron. & Commun. Eng., Akdeniz Univ., Antalya

fYear

2006

fDate

4-8 June 2006

Firstpage

326

Lastpage

326

Abstract

Summary form only given. A gas flow rate is one of the main parameters affecting the discharge surface treatment. This is the nitrogen plasma coating technology presented, and a power coupling efficiency of microwave source to bulk plasma for thin film coating performance has been tried to figure out. Silicone based polymer substrates were interacted with N₂ plasma discharge which causes the cracks on its surface for a certain time of interaction. Both the plasma density and the resulting ion current density are related to the residence time of the gas atoms or molecules which in turn is determined by the pumping speed and the gas flow rate. Scanning electron microscope images of the effects of exposing the polymer composite to nitrogen plasma with different gas flow rate are presented

Keywords

nitrogen; plasma density; plasma materials processing; plasma transport processes; plasma-wall interactions; polymers; scanning electron microscopy; sputter etching; surface cracks; surface structure; N₂; discharge surface treatment; etching; gas flow rate; ion current density; microwave source; nitrogen plasma coating technology; plasma density; polymer composite; power coupling efficiency; residence time; scanning electron microscope images; silicone based polymer substrates; surface cracks; thin film coating; Coatings; Etching; Fault location; Fluid flow; Nitrogen; Plasma applications; Plasma density; Plasma sources; Surface cracks; Surface discharges;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. The 33rd IEEE International Conference on

Conference_Location

Traverse City, MI

Print_ISBN

1-4244-0125-9

Type

conf

DOI

10.1109/PLASMA.2006.1707199

Filename

1707199