Title :
Millimeter-wave CMOS circuits for a high data rate wireless transceiver
Author :
Nguyen, Tai Nghia ; Lee, Seong-Gwon ; Hwang, Sang-Hyun ; Lee, Jong-Wook ; Kim, Byung-Sung
Author_Institution :
Sch. of Electron. & Inf., Kyung Hee Univ., Suwon, South Korea
Abstract :
This paper presents millimeter-wave CMOS building blocks for a high date rate wireless transceiver. The results include measured data for a 40-50 GHz broad-band low noise amplifier, a 40 GHz tuned power amplifier, and an 18 GHz voltage controlled oscillator. Also, simulation results for a 22 GHz multi-modulus prescaler is presented for implementing phase locked loop. The circuits were fabricated 0.13 ¿m CMOS process. The measured results showed good agreement with simulation data demonstrating good modeling accuracy of CMOS active and passive devices for millimeter-wave applications.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; field effect MIMIC; integrated circuit modelling; low noise amplifiers; millimetre wave amplifiers; millimetre wave oscillators; millimetre wave power amplifiers; phase locked loops; transceivers; voltage-controlled oscillators; CMOS active devices; CMOS passive devices; broad-band low noise amplifier; frequency 18 GHz; frequency 22 GHz; frequency 40 GHz to 50 GHz; high data rate wireless transceiver; millimeter-wave CMOS circuits; multimodulus prescaler; phase locked loop; size 0.13 mum; tuned power amplifier; voltage controlled oscillator; Circuit noise; Circuit simulation; Low-noise amplifiers; Millimeter wave circuits; Millimeter wave measurements; Noise measurement; Phase locked loops; Power measurement; Transceivers; Voltage-controlled oscillators; CMOS; millimeter-wave; modeling; wireless transceiver;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351320
