DocumentCode
2650206
Title
Anisotropy of gain in nanowire lasers
Author
Maslov, A.V. ; Ning, C.Z.
Author_Institution
Center for Nanotechnol., NASA Ames Res. Center, Moffett Field, CA, USA
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1017
Abstract
We investigate the polarization properties of wurtzite GaN nanowire-based lasers. In particular, we emphasize the different orientations of the polarization of the lowest transitions in thick and thin nanowires.
Keywords
III-V semiconductors; gallium compounds; laser beams; nanowires; quantum well lasers; semiconductor quantum wires; GaN; gain anisotropy; laser polarization property; polarization orientation; quantum wires; wurtzite GaN nanowire-based lasers; Absorption; Anisotropic magnetoresistance; Gallium nitride; Geometrical optics; Laser transitions; Optical polarization; Optical resonators; Optical waveguides; Semiconductor lasers; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549015
Filename
1549015
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