Title :
Anisotropy of gain in nanowire lasers
Author :
Maslov, A.V. ; Ning, C.Z.
Author_Institution :
Center for Nanotechnol., NASA Ames Res. Center, Moffett Field, CA, USA
Abstract :
We investigate the polarization properties of wurtzite GaN nanowire-based lasers. In particular, we emphasize the different orientations of the polarization of the lowest transitions in thick and thin nanowires.
Keywords :
III-V semiconductors; gallium compounds; laser beams; nanowires; quantum well lasers; semiconductor quantum wires; GaN; gain anisotropy; laser polarization property; polarization orientation; quantum wires; wurtzite GaN nanowire-based lasers; Absorption; Anisotropic magnetoresistance; Gallium nitride; Geometrical optics; Laser transitions; Optical polarization; Optical resonators; Optical waveguides; Semiconductor lasers; Wires;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549015
