Title :
The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers
Author :
Qiu, Y.N. ; Rorison, J.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
Abstract :
An improved band anti-crossing model is presented in which the position of the nitrogen within the quantum well is included. This is found to strongly influence the conduction band levels, the dipole moments and gain.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; indium compounds; nitrogen; quantum well lasers; semiconductor quantum wells; BAC model; InGaNAs-GaAs; band Hamiltonian; band anticrossing model; band mixing effects; conduction band level; dipole moment; nitrogen position dependence; quantum well lasers gain; Electrons; Fiber lasers; Gallium arsenide; Laser modes; Nitrogen; Optical mixing; Performance gain; Photonic band gap; Quantum well lasers; Stationary state;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549022
