DocumentCode
2650367
Title
A compact analytical model for multi-island single electron transistors
Author
Chi, Yaqing ; Sui, Bingcai ; Fang, Liang ; Zhou, Hailiang ; Zhong, Haiqing ; Sun, He
Author_Institution
Nat. Lab. for Parallel & Distrib. Process., Nat. Univ. of Defense Technol., Hunan, China
fYear
2009
fDate
20-23 Oct. 2009
Firstpage
662
Lastpage
665
Abstract
Multi-island single electron transistor (SET) has become a promising candidate for the kernel device of the logic circuit in the near future. A novel compact analytical model for multi-island SET is proposed in terms of current. The new approach is based on the orthodox theory of single electron tunnelling and steady-state master equation. The model is accurate and fast compared with SIMON, and suitable for the ASIC design of multi-island SET circuit simulation.
Keywords
logic circuits; master equation; single electron transistors; tunnelling; ASIC design; SIMON; compact analytical model; kernel device; logic circuit; multiisland SET circuit simulation; multiisland single electron transistors; orthodox theory; single electron tunnelling; steady-state master equation; Analytical models; Single electron transistors; analytical model; multi-island; single electron transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location
Changsha, Hunan
Print_ISBN
978-1-4244-3868-6
Electronic_ISBN
978-1-4244-3870-9
Type
conf
DOI
10.1109/ASICON.2009.5351333
Filename
5351333
Link To Document