DocumentCode
2650791
Title
Low Temperature Performance of GaAs MESFETs at L-Band
Author
Pierro, J. ; Louie, K.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
28
Lastpage
30
Abstract
A considerable amount of work has been reported on the use of GaAs MESFET amplifiers at cryogenic temperatures. Most of the applications were for frequencies above 4 GHz. In this paper we discuss a 1.4-GHz GaAs MESFET amplifier cooled to 77 K with a noise temperature of less than 20 Kelvins over a 100-MHz bandwidth. The amplifier serves as an IF amplifier for a millimeter-wave cooled mixer.
Keywords
Bandwidth; Cryogenics; FETs; Frequency; Gallium arsenide; Impedance; Kelvin; L-band; MESFETs; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1123959
Filename
1123959
Link To Document