A 760mV CMOS voltage reference with mobility and subthreshold slope compensation

Author

Li, Yongjia ; Xia, Xiaojuan ; Sun, Weifeng ; Lu, Shengli

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2009

fDate

20-23 Oct. 2009

Firstpage

1145

Lastpage

1148

Abstract

A low voltage MOSFET-only voltage reference using body effect and subthreshold operation is proposed in this paper. A temperature coefficient of 5 ppm/Â°C from -55Â°C to 90Â°C is achieved as the combined effects of: 1) a suppression of the temperature dependence of mobility; 2) a piecewise compensation of the temperature dependence of subthreshold slope parameter during the second half of temperature range. The voltage reference is designed in SMIC 0.13 Â¿m CMOS process. It is able to operate at power supply voltage down to 760 mV and consumes a supply current of less than 1 Â¿A at 90Â°C.

Keywords

CMOS integrated circuits; MOSFET; CMOS voltage reference; SMIC CMOS process; low voltage MOSFET-only voltage reference; mobility slope compensation; piecewise compensation; size 0.13 mum; subthreshold slope compensation; temperature -55 degC to 90 degC; temperature coefficient; temperature dependence suppression; voltage 760 mV; CMOS process; Circuits; Low voltage; MOSFETs; Power supplies; Resistors; Sun; Temperature dependence; Temperature distribution; Threshold voltage; CMOS voltage reference; bandgap; low voltage; subthreshold; temperature compensation;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2009. ASICON '09. IEEE 8th International Conference on

Conference_Location

Changsha, Hunan

Print_ISBN

978-1-4244-3868-6

Electronic_ISBN

978-1-4244-3870-9

Type

conf

DOI

10.1109/ASICON.2009.5351361

Filename

5351361