Title :
A 760mV CMOS voltage reference with mobility and subthreshold slope compensation
Author :
Li, Yongjia ; Xia, Xiaojuan ; Sun, Weifeng ; Lu, Shengli
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
A low voltage MOSFET-only voltage reference using body effect and subthreshold operation is proposed in this paper. A temperature coefficient of 5 ppm/°C from -55°C to 90°C is achieved as the combined effects of: 1) a suppression of the temperature dependence of mobility; 2) a piecewise compensation of the temperature dependence of subthreshold slope parameter during the second half of temperature range. The voltage reference is designed in SMIC 0.13 ¿m CMOS process. It is able to operate at power supply voltage down to 760 mV and consumes a supply current of less than 1 ¿A at 90°C.
Keywords :
CMOS integrated circuits; MOSFET; CMOS voltage reference; SMIC CMOS process; low voltage MOSFET-only voltage reference; mobility slope compensation; piecewise compensation; size 0.13 mum; subthreshold slope compensation; temperature -55 degC to 90 degC; temperature coefficient; temperature dependence suppression; voltage 760 mV; CMOS process; Circuits; Low voltage; MOSFETs; Power supplies; Resistors; Sun; Temperature dependence; Temperature distribution; Threshold voltage; CMOS voltage reference; bandgap; low voltage; subthreshold; temperature compensation;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351361
