Title :
Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET
Author :
Seoane, N. ; Indalecio, G. ; Comesana, E. ; Garcia-Loureiro, Antonio J. ; Aldegunde, Manuel ; Kalna, Karol
Author_Institution :
CITIUS, Univ. of Santiago de Compostela, Santiago de Compostela, Spain
Abstract :
We investigate the impacts of random dopant (RD) and gate workfunction variability on the subthreshold characteristics of a 50-nm-gate-length inversion-mode gate-all-around In0.53Ga0.47As MOSFET using a 3-D finite-element quantum-corrected drift-diffusion device simulator calibrated to experimental data. We have studied threshold voltage, off-current, and subthreshold slope variations. The workfunction variations on the subthreshold characteristics dominate and decrease with the reduction in grain diameter. The simulated grain diameters of 10, 7, and 5 nm exhibit threshold voltage standard deviations of 52, 41, and 27 mV, respectively. These values are larger than those observed in TiN-metal-gate Si FinFETs for a similar gate length. The impact of RD fluctuations is negligible when compared with bulk Si MOSFETs, giving a threshold voltage spread of only 6 mV.
Keywords :
III-V semiconductors; MOSFET; finite element analysis; gallium arsenide; indium compounds; semiconductor device models; work function; 3D finite-element quantum-corrected drift-diffusion device simulator; FinFET; GAA MOSFET; In0.53Ga0.47As; RD fluctuations; gate-length inversion-mode gate-all-around MOSFET; grain diameter reduction; metal-gate work function variability; random dopant; size 10 nm; size 5 nm; size 50 nm; size 7 nm; subthreshold characteristics; subthreshold slope variations; three-dimensional simulations; voltage 27 mV; voltage 41 mV; voltage 52 mV; FinFETs; Grain size; Logic gates; Semiconductor process modeling; Silicon; Solid modeling; Threshold voltage; Density gradient (DG); III–V materials; drift–diffusion (DD); gate-all-around (GAA) MOSFETs; intrinsic parameter fluctuations;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2230313
