Title :
High Power 94-GHz Pulsed IMPATT Oscillators
Author :
Chang, K. ; Sun, C. ; English, D.L. ; Nakaji, E.M.
fDate :
April 30 1979-May 2 1979
Abstract :
High peak power oscillators using double-drift IMPATT diodes have been developed in W-band, The diodes were operated with 100 ns pulsewidth and 0.5 percent duty cycle. Peak power of 13 watts were consistently achieved. As a best result, over 15W peak power was achieved with selected diodes.
Keywords :
Circuits; Current density; Diodes; Doping; EMP radiation effects; Frequency; Impedance; Injection-locked oscillators; Millimeter wave radar; Space vector pulse width modulation;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1123974
