Title :
High Power Pulsed IMPATT Oscillator Near 140 GHz
Author :
Ngan, Y.C. ; Nakaji, E.M.
fDate :
April 30 1979-May 2 1979
Abstract :
IMPATT diodes with a double drift p+-p-n-n+ doping profile were fabricated and tested for high power pulsed operation. Using a pulse width of 100 ns and a 0.5% duty factor, a peak output power of 3.0W with 2.8% conversion efficiency has been measured at 140 GHz.
Keywords :
Circuit optimization; Fabrication; Frequency; Ion implantation; Microwave Theory and Techniques Society; Oscillators; Power generation; Pulse transformers; Semiconductor diodes; Sun;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1123975
