Title :
A simple parameter extraction method for on-chip inductors
Author :
Lu, Xiaoming ; Xi, Jingtian ; Yan, Na ; Min, Hao
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
In this paper a simple parameter extraction method is proposed. The extraction method is applied to extract parameters from the measured or simulated S-parameters of on-chip inductors fabricated with SMIC 0.18 ¿m CMOS RF technology. The result shows a good agreement with the measured or simulated data over a wide frequency range without any optimization.
Keywords :
CMOS integrated circuits; S-parameters; inductors; radiofrequency integrated circuits; SMIC CMOS RF technology; on-chip inductors; simple parameter extraction method; simulated S-parameters; size 0.18 mum; CMOS technology; Coupling circuits; Data mining; Electrical resistance measurement; Frequency measurement; Inductors; Parameter extraction; Radiofrequency integrated circuits; Scattering parameters; Strips; on-chip inductor; parameter extraction; wide band;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351381
