Title :
A sub-1V 115nA 0.35µm CMOS voltage reference for ultra low-power applications
Author :
Ma, Haifeng ; Zhou, Feng
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
Abstract :
A voltage reference circuit capable of sub-1 V operation and with ultra-low power consumption is introduced in this paper. In the proposed circuit, proportional-to-absolute-temperature voltage is generated by using the series-connection of two NMOS devices working in sub-threshold region and the gate-to-source voltage of another NMOS device is adopted to realize the complementary-to-absolute-temperature voltage. Moreover, the temperature compensation is performed by using a switch-capacitor circuit. The proposed circuit is implemented in chartered 0.35 μm CMOS technology and occupies an active chip area of 0.021 mm2. Post-layout simulation results show that it can operate with a supply voltage down to 0.9 V while consuming 115 nA ground current. With 1 V power supply, the output voltage is 142.8 mV at 25°C and the temperature coefficient is 25.5 ppm/°C.
Keywords :
CMOS integrated circuits; low-power electronics; reference circuits; CMOS voltage reference; complementary-to-absolute-temperature voltage; current 115 nA; gate-to-source voltage; post-layout simulation; proportional-to-absolute-temperature voltage; size 0.35 μm; switch-capacitor circuit; temperature 25 °C; two NMOS devices; ultra low-power applications; ultra-low power consumption; voltage 0.9 V; voltage 1 V; voltage reference circuit; Art; CMOS technology; Circuit simulation; Energy consumption; Land surface temperature; MOS devices; Resistors; Switching circuits; Virtual reality; Voltage; Analog integrated circuit; Low-power low-voltage application; Temperature effect; Voltage reference;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351397
