2.4 GHz Doherty power amplifier with on-chip active balun design

Author

Li, Mei-Guang ; Wu, Qi-Rong ; Shi, Rui-Ying

Author_Institution

Sch. of Phys. Sci. & Technol., Sichuan Univ., Sichuan, China

fYear

2009

fDate

20-23 Oct. 2009

Firstpage

1078

Lastpage

1080

Abstract

In this work, a 2.4 GHz Doherty power amplifier with a on-chip active balun is presented by using the SMIC CMOS 0.18 Â¿m technology. With the employment of this balun, the bulky input quadrature coupler which is needed in the traditional Doherty power amplifier could be canceled. Consequently, the power gain of the Doherty power amplifier is substantially improved. For there is only one DC path in this designed on-chip active balun, the DC power consumption is very low. As far as the author has known, it is the first time that this low DC consumption balun has been reported to be used in the Doherty power amplifier. The maximum output power of this amplifier is 22.4 dBm with its power added efficiency as 47.6%. At 1-dB compression point this PA exhibits 21.3 dBm of output power with 45% PAE with 20 dB of power gain.

Keywords

CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; baluns; power amplifiers; DC power consumption; Doherty power amplifier; SMIC CMOS technology; bulky input quadrature coupler; efficiency 45 percent; efficiency 47.6 percent; frequency 2.4 GHz; low DC consumption balun; on-chip active balun design; power added efficiency; power gain; size 0.18 mum; CMOS process; CMOS technology; Energy consumption; Gallium arsenide; High power amplifiers; Impedance matching; Microelectronics; Power amplifiers; Power generation; Radiofrequency amplifiers; Balun; CMOS; Doherty power amplifier (PA); high-efficiency amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2009. ASICON '09. IEEE 8th International Conference on

Conference_Location

Changsha, Hunan

Print_ISBN

978-1-4244-3868-6

Electronic_ISBN

978-1-4244-3870-9

Type

conf

DOI

10.1109/ASICON.2009.5351398

Filename

5351398