Title :
2.4 GHz Doherty power amplifier with on-chip active balun design
Author :
Li, Mei-Guang ; Wu, Qi-Rong ; Shi, Rui-Ying
Author_Institution :
Sch. of Phys. Sci. & Technol., Sichuan Univ., Sichuan, China
Abstract :
In this work, a 2.4 GHz Doherty power amplifier with a on-chip active balun is presented by using the SMIC CMOS 0.18 ¿m technology. With the employment of this balun, the bulky input quadrature coupler which is needed in the traditional Doherty power amplifier could be canceled. Consequently, the power gain of the Doherty power amplifier is substantially improved. For there is only one DC path in this designed on-chip active balun, the DC power consumption is very low. As far as the author has known, it is the first time that this low DC consumption balun has been reported to be used in the Doherty power amplifier. The maximum output power of this amplifier is 22.4 dBm with its power added efficiency as 47.6%. At 1-dB compression point this PA exhibits 21.3 dBm of output power with 45% PAE with 20 dB of power gain.
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; baluns; power amplifiers; DC power consumption; Doherty power amplifier; SMIC CMOS technology; bulky input quadrature coupler; efficiency 45 percent; efficiency 47.6 percent; frequency 2.4 GHz; low DC consumption balun; on-chip active balun design; power added efficiency; power gain; size 0.18 mum; CMOS process; CMOS technology; Energy consumption; Gallium arsenide; High power amplifiers; Impedance matching; Microelectronics; Power amplifiers; Power generation; Radiofrequency amplifiers; Balun; CMOS; Doherty power amplifier (PA); high-efficiency amplifier;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351398
