Title :
A low spur charge pump in 0.35µm SiGe process for PLL
Author :
Ye, Song ; Wu, Lingling ; Yu, Yang ; Wu, Xuan ; Zhou, Shuailin ; Tang, Shoulong
Author_Institution :
Chengdu Univ. of Inf. Technol., Chengdu, China
Abstract :
The operation, design and measurement of a charge pump in a 0.35 μm SiGe process are presented. Measurements show, within the operating frequency range of 3.1 GHz to 4.1 GHz, that the charge pump achieves a less than 0.6% mismatch between the source and sink current over the output voltage range of 0.6 V to 2.8 V at power voltage 3.3 V, and the reference spur is below -85 dBc. The charge pump is used in an integer-N PLL for WCDMA applications.
Keywords :
Ge-Si alloys; charge pump circuits; phase locked loops; semiconductor materials; SiGe; WCDMA applications; charge pump phase locked loops; frequency 3.1 GHz to 4.1 GHz; integer-N PLL; low spur charge pump; size 0.35 μm; voltage 0.6 V to 2.8 V; voltage 3.3 V; Charge measurement; Charge pumps; Current measurement; Frequency measurement; Germanium silicon alloys; Multiaccess communication; Phase locked loops; Power measurement; Silicon germanium; Voltage; Charge pump; integer-N pll; mismatch; phase noise; reference spurs;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351402
