A low spur charge pump in 0.35µm SiGe process for PLL

Author

Ye, Song ; Wu, Lingling ; Yu, Yang ; Wu, Xuan ; Zhou, Shuailin ; Tang, Shoulong

Author_Institution

Chengdu Univ. of Inf. Technol., Chengdu, China

fYear

2009

fDate

20-23 Oct. 2009

Firstpage

1070

Lastpage

1073

Abstract

The operation, design and measurement of a charge pump in a 0.35 μm SiGe process are presented. Measurements show, within the operating frequency range of 3.1 GHz to 4.1 GHz, that the charge pump achieves a less than 0.6% mismatch between the source and sink current over the output voltage range of 0.6 V to 2.8 V at power voltage 3.3 V, and the reference spur is below -85 dBc. The charge pump is used in an integer-N PLL for WCDMA applications.

Keywords

Ge-Si alloys; charge pump circuits; phase locked loops; semiconductor materials; SiGe; WCDMA applications; charge pump phase locked loops; frequency 3.1 GHz to 4.1 GHz; integer-N PLL; low spur charge pump; size 0.35 μm; voltage 0.6 V to 2.8 V; voltage 3.3 V; Charge measurement; Charge pumps; Current measurement; Frequency measurement; Germanium silicon alloys; Multiaccess communication; Phase locked loops; Power measurement; Silicon germanium; Voltage; Charge pump; integer-N pll; mismatch; phase noise; reference spurs;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2009. ASICON '09. IEEE 8th International Conference on

Conference_Location

Changsha, Hunan

Print_ISBN

978-1-4244-3868-6

Electronic_ISBN

978-1-4244-3870-9

Type

conf

DOI

10.1109/ASICON.2009.5351402

Filename

5351402