Simulation study on process conditions for high-speed silicon photodetector and quantum-well structuring for increased number of wavelength discriminations

In this work, process conditions and geometric parameters for high-speed p-i-n silicon photodetector are optimized by device simulation. Efforts were made to build up criteria for device fabrication based on silicon epitaxy. For an optimized silicon photodetector, a bandwidth as wide as 80 GHz was obtained at 1 V. Furthermore, a way of increasing wavelength discriminations by introducing silicon-germanium quantum wells for multiple-wavelength signal processing is exploited.