Nano-transfer printing of functioning MIM tunnel diodes

Author

Bareiss, Mario ; Weiler, Benedikt ; Kälblein, Daniel ; Zschieschang, Ute ; Klauk, Hagen ; Scarpa, Giuseppe ; Fabel, Bernhard ; Lugli, Paolo ; Porod, Wolfgang

Author_Institution

Inst. for Nanoelectron., Tech. Univ. Munchen, München, Germany

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

Nano diodes show great potential for applications in detectors, communications and energy harvesting. In this work, we focus on nano transfer printing (nTP) to fabricate nm-scale diodes over extensive areas. Using a temperature-enhanced process, several millions of diodes were transfer-printed in one single step. We show the reliable transfer of functioning MIM diodes, which were electrically characterized by conductive Atomic Force Microscopy (c-AFM) measurements. Quantum-mechanical tunneling was determined to be the main conduction mechanism across the metal-oxide-metal junction.

Keywords

MIM devices; atomic force microscopy; nanofabrication; tunnel diodes; tunnelling; conduction mechanism; conductive atomic force microscopy measurement; functioning MIM tunnel diode; metal-oxide-metal junction; nanotransfer printing; quantum-mechanical tunneling; temperature-enhanced process; Metals; Printing; Semiconductor diodes; Silicon; Substrates; Surface topography; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243287

Filename

6243287