Title :
Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot
Author :
Kamioka, J. ; Kodera, T. ; Horibe, K. ; Kawano, Y. ; Oda, S.
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We realized lithographically-defined electrically-tunable silicon quantum dot (QD) and charge sensor. Two types of device were fabricated and measured. One is heavily P-doped, and the other is back gate (BG)-induced undoped QD device. I-V characteristic of QD and charge sensor was clearly observed in both devices. Then, we estimate capacitance between the charge sensor and QD or two side gates (SGs) from the measurement and the simulation, and compared two devices in terms of their charging energy.
Keywords :
elemental semiconductors; nanofabrication; nanolithography; nanosensors; phosphorus; semiconductor growth; semiconductor quantum dots; silicon; QD I-V characteristic; Si:P; back gate-induced undoped QD device; back-gate induced silicon quantum dot; capacitance; charge sensor; charging energy; electrically-tunable silicon quantum dot; heavily P-doped silicon quantum dot; lithography; Capacitance; Magnetic resonance imaging; Magnetic tunneling; Quantum dots; Sensors; Silicon; Substrates;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243288
