Title :
An Ultra Low Noise Microwave Synthesizer
Author :
Alley, G.D. ; Wang, H.C.
fDate :
April 30 1979-May 2 1979
Abstract :
A silicon bipolar transistor together with a Ba/sub 2/Ti/sub 9/O/sub 20/ dielectric resonator were used to design a low noise microwave synthesizer. The resulting FM noise Delta/f/sub rms/, was less than 0.0003 Hz in any 1 Hz band greater than 1000 Hz from the 1 GHz carrier.
Keywords :
Bipolar transistors; Circuit noise; Frequency; Injection-locked oscillators; Laboratories; Microwave generation; Phase noise; Power transmission lines; Solid state circuits; Synthesizers;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124000
