Title :
Charge sensing of a Si triple quantum dot system using single electron transistors
Author :
Mizokuchi, R. ; Kodera, T. ; Horibe, K. ; Kawano, Y. ; Oda, S.
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We fabricate a serial triple quantum dot (TQD) system, which is made on a silicon-on-insulator (SOI) wafer by dry etching and integrated with single electron transistors (SETs) as charge sensors. We observe charge transitions of a dot in the TQD in the characteristic of the charge sensor which is the furthest to the dot. It implies a SET charge sensor has a capability of sensing of all the charge transitions in TQD.
Keywords :
drying; elemental semiconductors; etching; semiconductor quantum dots; silicon; silicon-on-insulator; single electron transistors; SET charge sensor; Si; charge transitions; dry etching; silicon-on-insulator wafer; single electron transistors; triple quantum dot system; Current measurement; Logic gates; Quantum dots; Semiconductor device measurement; Sensor phenomena and characterization; Voltage measurement;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243290
