Title :
Single-electron transport through a single donor at elevated temperatures
Author :
Hamid, Earfan ; Moraru, Daniel ; Mizuno, Takeshi ; Tabe, Michiharu
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
We showed that, in nanoscale doped SOIFETs, new current peaks become observable as temperature is increased. For smallest 1-disk devices, a final new tunneling current peak has been observed even at T = 100 K, indicating that such patterned-channel devices are suitable for high temperature tunneling operation. Ionization energy was estimated to be about 5 times larger than for bulk Si, due to dielectric and confinement effect.
Keywords :
elemental semiconductors; field effect transistors; nanostructured materials; silicon-on-insulator; tunnelling; 1-disk devices; Si; confinement effect; current peaks; dielectric effect; high temperature tunneling operation; ionization energy; nanoscale doped SOIFET; patterned-channel devices; single donor; single-electron transport; temperature 100 K; tunneling current peak; Current measurement; Ionization; Nanoscale devices; Silicon; Temperature; Temperature measurement; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243293
