DocumentCode
2651666
Title
Implementation and validation of a new diode model for circuit simulation
Author
Leturcq, Ph. ; Berraies, M.O. ; Massol, J.L.
Author_Institution
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Volume
1
fYear
1996
fDate
23-27 Jun 1996
Firstpage
35
Abstract
The carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by way of an electrical analogy. The paper presents the physical basis and the practice of the new modelling approach thus allowed, in the representative case of PIN diodes
Keywords
carrier lifetime; circuit analysis computing; p-i-n diodes; power semiconductor diodes; semiconductor device models; software packages; ESACAP software; PIN diodes; carrier diffusion equation; charge dynamics; circuit simulation; computer simulation; electrical analogy; modelling approach; power bipolar devices; power semiconductor diode model; Boundary conditions; Charge carrier processes; Charge carriers; Circuit simulation; Electrons; Equations; Semiconductor device modeling; Semiconductor diodes; Space charge; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location
Baveno
ISSN
0275-9306
Print_ISBN
0-7803-3500-7
Type
conf
DOI
10.1109/PESC.1996.548556
Filename
548556
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