Title :
Implementation and validation of a new diode model for circuit simulation
Author :
Leturcq, Ph. ; Berraies, M.O. ; Massol, J.L.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
The carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by way of an electrical analogy. The paper presents the physical basis and the practice of the new modelling approach thus allowed, in the representative case of PIN diodes
Keywords :
carrier lifetime; circuit analysis computing; p-i-n diodes; power semiconductor diodes; semiconductor device models; software packages; ESACAP software; PIN diodes; carrier diffusion equation; charge dynamics; circuit simulation; computer simulation; electrical analogy; modelling approach; power bipolar devices; power semiconductor diode model; Boundary conditions; Charge carrier processes; Charge carriers; Circuit simulation; Electrons; Equations; Semiconductor device modeling; Semiconductor diodes; Space charge; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548556
