DocumentCode :
2651673
Title :
Effect of interfacial states on the technological variability of trigate MOSFETs
Author :
González-Marín, E. ; Ruiz, F.G. ; Godoy, A. ; Tienda-Luna, I.M. ; Gámiz, F.
Author_Institution :
Dipt. Electron., Univ. de Granada, Granada, Spain
fYear :
2012
fDate :
10-11 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (VT) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the effects of interfacial states (Dit). Different Dit(E) profiles have been considered, analyzing their influence for several device geometries.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; interface states; 2D Schrodinger-Poisson coupled equation system; interfacial state effect; subthreshold swing variability; technological variability; threshold voltage variability; trigate MOSFET; Electrostatics; FETs; Geometry; Insulators; Logic gates; Mathematical model; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
ISSN :
2161-4636
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
Type :
conf
DOI :
10.1109/SNW.2012.6243295
Filename :
6243295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2651673
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