Title :
Physical model for Random Telegraph Noise amplitudes and implications
Author :
Southwick, Richard G., III ; Cheung, K.P. ; Campbell, J.P. ; Drozdov, S.A. ; Ryan, J.T. ; Suehle, J.S. ; Oates, A.S.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the amplitude distribution - the limiting cases that are rare but nevertheless wreak havoc on circuit yield and reliability. Since one cannot realistically measure enough devices to imitate a large circuit, a physics-based quantitative model is urgently needed to replace the brute force approach. Recently we introduced a physical model for RTN [2-3] but it contains a serious error. In this paper, we developed and experimentally verified a new model that provides a physical understanding of RTN amplitude. By providing a quantitative link to device parameters, it points the way to control RTN in decananometer devices.
Keywords :
MOSFET; fluctuations; amplitude distribution; brute force approach; circuit reliability; circuit yield; decananometer devices; device parameters; physical model; physics-based quantitative model; random dopant fluctuations; random telegraph noise amplitudes; ultrascaled devices; wreak havoc; Logic gates; Mathematical model; Noise; Predictive models; Semiconductor device measurement; Semiconductor process modeling; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243296