Title :
Optoelectrical lifetime evaluation of single holes in SOI MOSFET
Author :
Du, Wei ; Putranto, Dedy Septono ; Satoh, Hiroaki ; Ono, Atsushi ; Priambodo, Purnomo Sidi ; Hartanto, Djoko ; Inokawa, Hiroshi
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.
Keywords :
MOSFET; elemental semiconductors; silicon-on-insulator; SOI MOSFET; Si; continuous light; digitized drain current; higher transverse electric field; histograms; optoelectrical lifetime evaluation; optoelectrical method; single hole lifetime; Charge carrier processes; Electric fields; Fitting; Histograms; Logic gates; MOSFET circuits; Spontaneous emission;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243297
