DocumentCode
2651708
Title
Ab initio analysis of donor state deepening in Si nano-channels
Author
Moraru, D. ; Kuzuya, Y. ; Hamid, E. ; Mizuno, T. ; Tabe, M. ; Mizuta, H.
Author_Institution
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear
2012
fDate
10-11 June 2012
Firstpage
1
Lastpage
2
Abstract
We analyzed by ab initio atomistic simulations the energy spectrum of individual donors in Si nanostructures and found significantly enhanced ionization energy (~ 1 eV). By correlating these findings to experimental measurements of doped nanoscale SOI-FETs, design rules can be clarified for tunneling operation of single-dopant devices towards room temperature.
Keywords
ab initio calculations; elemental semiconductors; field effect transistors; nanostructured materials; silicon; silicon-on-insulator; tunnelling; Si; ab initio atomistic simulation; donor state deepening; doped nanoscale SOI-FET; energy spectrum; enhanced ionization energy; individual donors; nanochannels; nanostructures; single-dopant devices; temperature 293 K to 298 K; tunneling operation; Atomic measurements; Ionization; Nanoscale devices; Semiconductor process modeling; Silicon; Stationary state; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location
Honolulu, HI
ISSN
2161-4636
Print_ISBN
978-1-4673-0996-7
Electronic_ISBN
2161-4636
Type
conf
DOI
10.1109/SNW.2012.6243298
Filename
6243298
Link To Document