Channel length-dependent series resistance?

Author

Campbell, J.P. ; Cheung, K.P. ; Drozdov, S.A. ; Southwick, R.G. ; Ryan, J.T. ; Oates, A.S. ; Suehle, J.S.

Author_Institution

Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

A recently developed series resistance (R_SD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent R_SD which is observed across a wide range of channel lengths and across many different technologies (SiO₂, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as R_SD is universally accepted as channel length-independent. However, careful examination of the R_SD extraction procedure as well as comparison between R_SD-corrected field effect mobility (u_FE) and geometric magnetoresistance mobility (u_MR) suggests that this unexpected observation may be valid.

Keywords

field effect devices; magnetoresistance; channel length-dependent series resistance; channel length-independent; corrected field effect mobility; geometric magnetoresistance mobility; series resistance extraction procedure; single nanoscale device; Educational institutions; Iron; Length measurement; Logic gates; Magnetoresistance; Resistance; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243299

Filename

6243299