Title :
Evaluation of scattering in asymmetric quasi-ballistic DG-MOSFET
Author :
Liu, Gai ; Du, Gang ; Lu, Tiao ; Liu, Xiaoyan ; Zhang, Pingwen ; Zhang, Xing
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Quasi-ballistic asymmetric DG-MOSFET has been simulated using a multi-subband Boltzmann transport equation solver and important parameters regarding to back-scattering at the top of barrier are carefully studied in this work. It is observed that the simulated results are in good agreement with established theory and phonon scattering still plays an important role in limiting the performance of MOSFET even when gate length is scaled down to sub-10nm.
Keywords :
Boltzmann equation; MOSFET; gate length; multisubband Boltzmann transport equation solver; phonon scattering; quasiballistic DG-MOSFET; scattering evaluation; Educational institutions; Electric potential; Logic gates; MOSFET circuits; Mathematical model; Phonons; Scattering;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243301
