• DocumentCode
    2651765
  • Title

    Fabrication and characterization of a Pi-gate ultrathin body junctionless poly-Si TFTs

  • Author

    Wu, Jia-Jiun ; Chen, Hung-Bin ; Han, Ming-Hung ; Wu, Yung-Chun ; Chang, Chun-Yen

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel method of fabricate ultrathin body (UTB) junctionless TFTs (JLTFT) with sub-10nm poly-Si channel has been successfully demonstrated. It is no additional mask for lithography. The cost of fabrication flow can be reduced by a novel method, that demonstrate at this work. UTB JLTFT has low threshold voltage and steep subthreshold slop 160 mV/dec at W/L=0.7um/1um. An ON/OFF current ratio is about 106, and transconductance does not decrease rapidly at a high drain voltage.
  • Keywords
    elemental semiconductors; silicon; thin film transistors; ON-OFF current ratio; Si; UTB JLTFT; fabrication flow; high drain voltage; pi-gate ultrathin body Junctionless poly-Si TFT; steep subthreshold slop; threshold voltage; transconductance; Controllability; Fabrication; Logic gates; Oxidation; Temperature measurement; Thin film transistors; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243302
  • Filename
    6243302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2651765