Title :
Fabrication and characterization of a Pi-gate ultrathin body junctionless poly-Si TFTs
Author :
Wu, Jia-Jiun ; Chen, Hung-Bin ; Han, Ming-Hung ; Wu, Yung-Chun ; Chang, Chun-Yen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A novel method of fabricate ultrathin body (UTB) junctionless TFTs (JLTFT) with sub-10nm poly-Si channel has been successfully demonstrated. It is no additional mask for lithography. The cost of fabrication flow can be reduced by a novel method, that demonstrate at this work. UTB JLTFT has low threshold voltage and steep subthreshold slop 160 mV/dec at W/L=0.7um/1um. An ON/OFF current ratio is about 106, and transconductance does not decrease rapidly at a high drain voltage.
Keywords :
elemental semiconductors; silicon; thin film transistors; ON-OFF current ratio; Si; UTB JLTFT; fabrication flow; high drain voltage; pi-gate ultrathin body Junctionless poly-Si TFT; steep subthreshold slop; threshold voltage; transconductance; Controllability; Fabrication; Logic gates; Oxidation; Temperature measurement; Thin film transistors; Transconductance;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243302
