Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode

Author

Lee, Jung Han ; Lee, Jieun ; Sun, Min-Chul ; Lee, Won Hee ; Uhm, Mihee ; Hwang, Seonwook ; Chung, In-Young ; Kim, Dong Myong ; Kim, Dae Hwan ; Park, Byung-Gook

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

A silicon nanowire field effect transistor (SiNW FET) was fabricated through the fabrication method compatible with that of MOSFET including back-end process without lift-off process. However, when it is working in an aqueous solution, the SiNW device as well as other transducer devices has various inherent instability problems such as hysteresis characteristics. We observed the hysteresis in DI water (DW) and confirmed that it is caused by mobile ion effect in DW with various experimental results.

Keywords

biosensors; electrodes; elemental semiconductors; field effect transistors; hysteresis; nanowires; silicon; transducers; DI water; MOSFET; Si; SiNW FET; aqueous environment; aqueous solution; back-end processing; biosensor; hysteresis characteristics; hysteresis characteristics analysis; inherent instability problems; mobile ion effect; reference electrode; silicon nanowire field effect transistor; transducer devices; Current measurement; FETs; Fabrication; Hysteresis; Logic gates; MOSFET circuits; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243305

Filename

6243305