DocumentCode :
2651825
Title :
Investigation on hump effects of L-shaped tunneling filed-effect transistors
Author :
Kim, Sang Wan ; Choi, Woo Young ; Kim, Hyungjin ; Sun, Min-Chul ; Kim, Hyun Woo ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
fYear :
2012
fDate :
10-11 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, hump effects of L-shaped tunneling field-effect transistors (TFETs) have been investigated. It turns out that the hump effects are originated from the two different turn-on voltages (Vturn-on´s). By using device simulation, the source junction design has been optimized in order to suppress the hump effects.
Keywords :
field effect transistors; tunnelling; L-shaped tunneling field-effect transistors; TFET; device simulation; hump effects; source junction design; turn-on voltages; Educational institutions; FETs; Junctions; Logic gates; Nanoscale devices; Tunneling; L-shaped TFET; TFET; hump; non-local tunneling; tunneling field-effect transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
ISSN :
2161-4636
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
Type :
conf
DOI :
10.1109/SNW.2012.6243306
Filename :
6243306
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2651825
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