• DocumentCode
    2651825
  • Title

    Investigation on hump effects of L-shaped tunneling filed-effect transistors

  • Author

    Kim, Sang Wan ; Choi, Woo Young ; Kim, Hyungjin ; Sun, Min-Chul ; Kim, Hyun Woo ; Park, Byung-Gook

  • Author_Institution
    Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, hump effects of L-shaped tunneling field-effect transistors (TFETs) have been investigated. It turns out that the hump effects are originated from the two different turn-on voltages (Vturn-on´s). By using device simulation, the source junction design has been optimized in order to suppress the hump effects.
  • Keywords
    field effect transistors; tunnelling; L-shaped tunneling field-effect transistors; TFET; device simulation; hump effects; source junction design; turn-on voltages; Educational institutions; FETs; Junctions; Logic gates; Nanoscale devices; Tunneling; L-shaped TFET; TFET; hump; non-local tunneling; tunneling field-effect transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243306
  • Filename
    6243306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2651825