Title :
Optical-Microwave Effects in IMPATT Diode Oscillators
Author :
Vyas, H.P. ; Gutmann, R.J. ; Borrego, J.M.
fDate :
April 30 1979-May 2 1979
Abstract :
Significant difference in optical-microwave interactions, in Si IMPATT oscillators, due to electron and hole initiated avalanches have been demonstrated using ring device structures and modified disc and post type waveguide cavity. A large signal model accounting for this difference gives a good agreement with the experimental results.
Keywords :
Charge carrier processes; Diodes; Electron optics; Leakage current; Optical devices; Optical filters; Optical sensors; Optical waveguides; Oscillators; Photoconductivity;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124015
