Title :
3 GHz, 15 W Silicon Bipolar Transistors
Author :
Uchizaki, I. ; Hori, S. ; Oda, Y. ; Tomita, N.
fDate :
April 30 1979-May 2 1979
Abstract :
Silicon bipolar transistors delivering 15W output power with 4.8dB gain and 38% collector efficiency have been developed at 3GHz. The transistors have been fabricated by boron ion-implantation for base region and As diffusion from doped poly silicon for emitter region. Chemical dry etching techniques for fine patterning, and internal matching-techniques have been applied.
Keywords :
Bipolar transistors; Chemicals; Dry etching; Fabrication; Fingers; Power generation; Process design; Radio frequency; Silicon; Sputter etching;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124016
