A new layout method to improve the thermal stability of Multi-finger power HBT

Author

Chen, Y. ; Shen, H. ; Liu, X.

Author_Institution

Sch. of Inf. Sci. & Eng., Shan Dong Univ., Jinan, China

fYear

2009

fDate

20-23 Oct. 2009

Firstpage

344

Lastpage

346

Abstract

A new layout method to improve the thermal stability of multi-finger power heterojunction bipolar transistors (HBT) is presented in this paper. In the new layout the through-wafer-via is inserted into the central of the multi-finger power HBT and the emitter fingers were connected by a wide metal layer that was exactly on the active thermal emitter area. According to the experimental results of a 8 fingers GaAs power HBT, the new layout method with compare to the routine layout method can reduce the thermal resistance from 242Â°C/W to 163Â°C/W and expand the thermal stability power density from 0.76 mW/Â¿m² to 1.14 mW/Â¿m². And also the radio frequency (RF) gain loss of the power HBT due to the thermal effect was suppressed with the improvement of the thermal stability.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; thermal resistance; thermal stability; wide band gap semiconductors; GaAs; active thermal emitter; emitter fingers; layout method; multifinger power HBT; multifinger power heterojunction bipolar transistors; radio frequency gain loss; thermal resistance; thermal stability power density; Fingers; Foundries; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Temperature; Thermal resistance; Thermal stability; Heterojunction Bipolar Transistor; Power; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2009. ASICON '09. IEEE 8th International Conference on

Conference_Location

Changsha, Hunan

Print_ISBN

978-1-4244-3868-6

Electronic_ISBN

978-1-4244-3870-9

Type

conf

DOI

10.1109/ASICON.2009.5351430

Filename

5351430