Title :
A new layout method to improve the thermal stability of Multi-finger power HBT
Author :
Chen, Y. ; Shen, H. ; Liu, X.
Author_Institution :
Sch. of Inf. Sci. & Eng., Shan Dong Univ., Jinan, China
Abstract :
A new layout method to improve the thermal stability of multi-finger power heterojunction bipolar transistors (HBT) is presented in this paper. In the new layout the through-wafer-via is inserted into the central of the multi-finger power HBT and the emitter fingers were connected by a wide metal layer that was exactly on the active thermal emitter area. According to the experimental results of a 8 fingers GaAs power HBT, the new layout method with compare to the routine layout method can reduce the thermal resistance from 242°C/W to 163°C/W and expand the thermal stability power density from 0.76 mW/¿m2 to 1.14 mW/¿m2. And also the radio frequency (RF) gain loss of the power HBT due to the thermal effect was suppressed with the improvement of the thermal stability.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; thermal resistance; thermal stability; wide band gap semiconductors; GaAs; active thermal emitter; emitter fingers; layout method; multifinger power HBT; multifinger power heterojunction bipolar transistors; radio frequency gain loss; thermal resistance; thermal stability power density; Fingers; Foundries; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Temperature; Thermal resistance; Thermal stability; Heterojunction Bipolar Transistor; Power; Thermal stability;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351430
