Title :
A low breakdown-voltage charge pump based on Cockcroft-Walton structure
Author :
Zhang, Renyuan ; Huang, Zhangcai ; Inoue, Yasuaki
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
Abstract :
A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.
Keywords :
charge pump circuits; electric breakdown; voltage multipliers; Cockcroft-Walton type charge pump circuit; capacitor; efficiency 87 percent; efficiency 98.9 percent; low breakdown voltage process; low breakdown-voltage charge pump; power efficiency; transistor; voltage boosting efficiency; Boosting; Breakdown voltage; Capacitance; Capacitors; Charge pumps; Circuits; Diodes; Fabrication; Switches; Threshold voltage; Cockcroft-Walton type; boosting efficiency; breakdown voltage; power efficiency;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351433
